1. An NMOS differential pair is being designed in a 0.18μm CMOS technology with V-450mV, nCox-270μA/V², AVT=4 mV µm, and AB= 0.01 μm. The differential pair is expected to have a transconductance of 1mA/V when biased with a current source of 500μA. Size the transistors in the differential amplifier such that the input referred offset is better than 2mV 99.8% of the time (i.e., 30 variability).

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1.
An NMOS differential pair is being designed in a 0.18µm CMOS
technology with Vn=450mV, HnCox=270HA/V², AVT=4 mV µm, and
As = O.01µm.
transconductance of ImA V when biased with a current source of
500HA. Size the transistors in the differential anmplifier such that the
input referred offset is better than 2mV 99.8% of the time (i.e., 30
variabil ity).
The
differential
pair
is
expected
to
have
a
Transcribed Image Text:1. An NMOS differential pair is being designed in a 0.18µm CMOS technology with Vn=450mV, HnCox=270HA/V², AVT=4 mV µm, and As = O.01µm. transconductance of ImA V when biased with a current source of 500HA. Size the transistors in the differential anmplifier such that the input referred offset is better than 2mV 99.8% of the time (i.e., 30 variabil ity). The differential pair is expected to have a
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