1. A silicon p-n junction is biased as shown below. Determine the depletion width xn in the unit of μm. 19 10 P IV 18 10⁰ -Xp d xn in cin T= 300k
1. A silicon p-n junction is biased as shown below. Determine the depletion width xn in the unit of μm. 19 10 P IV 18 10⁰ -Xp d xn in cin T= 300k
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![1. A silicon p-n junction is biased as shown below. Determine the depletion width Xn the unit
of μm.
119
10
P
18
10⁰⁰ cm's
IV
in
-Xp d. Xn
T= 300k](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F20048a05-d67b-468e-858b-06de79d12dc0%2Fa2f1ca55-ff9d-4d00-a48c-94590c61dfe4%2Fdnrbz5j_processed.jpeg&w=3840&q=75)
Transcribed Image Text:1. A silicon p-n junction is biased as shown below. Determine the depletion width Xn the unit
of μm.
119
10
P
18
10⁰⁰ cm's
IV
in
-Xp d. Xn
T= 300k
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