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- Shown in the figure is a schematic of a power electronics circuit. a) Identify the power semiconductor devices included in the circuit b) sketch their symbol with terminal identification c) explain the function of power semiconductor devices included in the circuit 120kn 240 V 60 Hz 2N2574 ODeg 1.0kn ECG6412 :100nFConvert the following numbers from the given base to the wanted base: a) (382.1875)10 = ( ......), %3D b) (101100.110101)2 = (.......)16Produce a working circuit with the Integrated Circuits shown in the image.
- Give the meaning of each acronym of solid state devices. Also sketch the schematic symbol for each device. SUS Shockley diode D-MOSFET JFET SCR DIAC THYRISTOR Device TRIAC 1. 3. 4. 6. 8. 10. 12. 14. Symbol 2. 5. 7. 9. 11. 13. 15. Meaning No entryAssume that Ic=le what is the value of VCE and VC. Atleast 2 decimal place for multiple digits. ... 4 RC RB 10002 50k2 VCC B 25V 100A/A 8 R3 Re 5kQ 8002Can someone please explain these two schematics in a short paragraph? Do they both function as voltage regulators?
- Please answer in typing formatDetermine the gate current and anode current when the switch is momentarily closed in the figure shown below. Assume VAK = 0.8 V, VGK = 0.6 V, and IH= 10 mA. B1 6V 41H", R1 1.2K R2 2.2K SW1 D1 82 20V *HThe characteristic of the UJT exhibits the following values: n = 0.575, RB1 = 10 k-ohms, Vv = 1.3 V, Iv =20mA, Ip=15UA. 125V B2 B, Determine the following: a. Determine the R82 (in kilo-ohms) of the UJT b. Determine the maximum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT c. Determine the minimum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT
- Click Submit to complete this assessment. Question 10 Extrinsic semiconductors are having more charge carriers than intrinsic semiconductor. True False A Click Submit to complete this assessment. MacBook ProDetermine the approximate value of drain current (Ip) of the given circuit below. VDD 20V 1.8ka a1 10mA -4.5V pss 1MO 9100 O 2.92 mA 2.48 mA O 1.88 mA 1.29 mAA. Determine the collector current in Q1, Q2, and Q3 and reference current Ix of the circuit below. Assume silicon transistor is used and ß = 100. vc 10V R1 2.2kn Q1 Q2 Q3 2N3904 2N3904 2N3904