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1) For the circuit in Figure 1, calculate the following with the exact analysis. (Make the solutions for silicon transistors) nd +Vcc = 20 V d RB1 Rc 10 kn bnotos a) Find VB, Vc, VE, VBE, VCE, VBC for ß = 80 75 k2 VB B = 80 b) For ß = 80 and ß =160 , compare the VCE and Ic in a table, show the rate of change with percentages (%). Explain the reason for this result. VE

1) For the circuit in Figure 1, calculate the following with the exact analysis. (Make the solutions for silicon transistors) nd +Vcc = 20 V d RB1 Rc 10 kn bnotos a) Find VB, Vc, VE, VBE, VCE, VBC for ß = 80 75 k2 VB B = 80 b) For ß = 80 and ß =160 , compare the VCE and Ic in a table, show the rate of change with percentages (%). Explain the reason for this result. VE

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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1) For the circuit in Figure 1, calculate the following with the exact analysis. (Make the solutions for silicon transistors) +Vcc = 20 V Rc AmS 10 kn nabimota Vc 1d RB1 75 k2 a) Find VB, Vc, VE, VBE, VCE, VBC for B = 80 b) For ß = 80 and B =160 , compare the VCE and Ic in a table, show the rate of change with percentages (%). Explain the reason for this result. VB B = 80 %3D RB2 VE 10 k2 RE 1.2 k2 Figure 1
Transcribed Image Text:1) For the circuit in Figure 1, calculate the following with the exact analysis. (Make the solutions for silicon transistors) +Vcc = 20 V Rc AmS 10 kn nabimota Vc 1d RB1 75 k2 a) Find VB, Vc, VE, VBE, VCE, VBC for B = 80 b) For ß = 80 and B =160 , compare the VCE and Ic in a table, show the rate of change with percentages (%). Explain the reason for this result. VB B = 80 %3D RB2 VE 10 k2 RE 1.2 k2 Figure 1
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