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1- A silicon pn junction at T=300k with zero applied bias has doping concentrations of ND=5x1016 cm-3 and NA=5x1015 cm-3 . Determine xn, xp, w and |Emax|. Assume ni=1.5x1010 cm-3 , εsi=11.9.

1- A silicon pn junction at T=300k with zero applied bias has doping concentrations of ND=5x1016 cm-3 and NA=5x1015 cm-3 . Determine xn, xp, w and |Emax|. Assume ni=1.5x1010 cm-3 , εsi=11.9.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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1- A silicon pn junction at T=300k with zero applied bias has doping concentrations of ND=5x1016 cm-3 and NA=5x1015 cm-3 . Determine xn, xp, w and |Emax|. Assume ni=1.5x1010 cm-3 , εsi=11.9.
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