03:- Calculate the electron and hole concentration under steady-state illumination in an n-type silicon with GL = 10¹6 cm ³s¹, ND = 10¹5 cm3, and tn = tp = 10 µs.
03:- Calculate the electron and hole concentration under steady-state illumination in an n-type silicon with GL = 10¹6 cm ³s¹, ND = 10¹5 cm3, and tn = tp = 10 µs.
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Transcribed Image Text:03:- Calculate the electron and hole concentration under steady-state illumination in
an n-type silicon with G₁ = 10¹6 cm ³s¹, ND = 10¹5 cm³, and tn = tp = 10 µs.
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