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. If the junction depth of Phosphorous atoms diffused into a p-type afer after a 1.25 hours pre-deposition stage is 6.575 um, determine the iffusivity of the dopants at 1300 °C, in cm²/s. Assume that the solubility c to the wafer is 5.875 X 1020 /cm³ and that the bulk concentration of the opants is 6.745 X 1015 /cm³. (4 points) . If the dopants were driven into the substrate for 2.2 hours, at the same emperature, what would be the junction depth in um, after the drive-in rocess? (6 points)

. If the junction depth of Phosphorous atoms diffused into a p-type afer after a 1.25 hours pre-deposition stage is 6.575 um, determine the iffusivity of the dopants at 1300 °C, in cm²/s. Assume that the solubility c to the wafer is 5.875 X 1020 /cm³ and that the bulk concentration of the opants is 6.745 X 1015 /cm³. (4 points) . If the dopants were driven into the substrate for 2.2 hours, at the same emperature, what would be the junction depth in um, after the drive-in rocess? (6 points)

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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1. A. If the junction depth of Phosphorous atoms diffused into a p-type wafer after a 1.25 hours pre-deposition stage is 6.575 µm, determine the diffusivity of the dopants at 1300 °C, in cm²/s. Assume that the solubility of P to the wafer is 5.875 X 1020 /cm³ and that the bulk concentration of the dopants is 6.745 X 1015 /cm³. (4 points) B. If the dopants were driven into the substrate for 2.2 hours, at the same temperature, what would be the junction depth in um, after the drive-in process? (6 points)
Transcribed Image Text:1. A. If the junction depth of Phosphorous atoms diffused into a p-type wafer after a 1.25 hours pre-deposition stage is 6.575 µm, determine the diffusivity of the dopants at 1300 °C, in cm²/s. Assume that the solubility of P to the wafer is 5.875 X 1020 /cm³ and that the bulk concentration of the dopants is 6.745 X 1015 /cm³. (4 points) B. If the dopants were driven into the substrate for 2.2 hours, at the same temperature, what would be the junction depth in um, after the drive-in process? (6 points)
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