. For the three circuits, (a) Give the transistor bias state, (b) Write the appropriate model equation, (c) Calculate ID, where W/L = 2, 0.4 V and K₂ = 200 μA/V². Vtn =

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### Problem 3-1

For the three circuits:

(a) **Give the transistor bias state**:  
Determine the bias state of the transistors (cutoff, saturation, or triode).

(b) **Write the appropriate model equation**:  
Identify and write the necessary equation for each circuit.

(c) **Calculate \( I_D \)**:  
Determine the drain current \( I_D \) for each circuit given:

- \( \frac{W}{L} = 2 \)
- \( V_{tn} = 0.4 \, \text{V} \)
- \( K_n = 200 \, \mu\text{A/V}^2 \)

**Circuit 1:**

- **Components:**
  - \( 10 \, \text{V} \) source
  - \( 8 \, \text{k}\Omega \) resistor
  - \( 2 \, \text{k}\Omega \) resistor
  - \( 2 \, \text{V} \) gate voltage
  - N-channel MOSFET

**Circuit 2:**

- **Components:**
  - \( 2 \, \text{V} \) source
  - \( 18 \, \text{k}\Omega \) resistor
  - \( 2 \, \text{k}\Omega \) resistor
  - \( 2 \, \text{V} \) gate voltage
  - N-channel MOSFET

**Circuit 3:**

- **Components:**
  - \( 2 \, \text{V} \) source
  - \( 12 \, \text{k}\Omega \) resistor
  - \( 8 \, \text{k}\Omega \) resistor
  - \( 2 \, \text{V} \) gate voltage
  - N-channel MOSFET

**Notes for Calculations:**
- **Bias State Identification:**
  - Determine \( V_{GS} \) and \( V_{DS} \).
  - Compare with \( V_{tn} \) to find the state of each transistor.

- **Model Equation:**
  - Use \( I_D = K_n \left(\frac{W}{L}\right) \left( V_{GS} - V_{tn} \right)^2 \) for saturation.
  - Use \( I_D = K
Transcribed Image Text:### Problem 3-1 For the three circuits: (a) **Give the transistor bias state**: Determine the bias state of the transistors (cutoff, saturation, or triode). (b) **Write the appropriate model equation**: Identify and write the necessary equation for each circuit. (c) **Calculate \( I_D \)**: Determine the drain current \( I_D \) for each circuit given: - \( \frac{W}{L} = 2 \) - \( V_{tn} = 0.4 \, \text{V} \) - \( K_n = 200 \, \mu\text{A/V}^2 \) **Circuit 1:** - **Components:** - \( 10 \, \text{V} \) source - \( 8 \, \text{k}\Omega \) resistor - \( 2 \, \text{k}\Omega \) resistor - \( 2 \, \text{V} \) gate voltage - N-channel MOSFET **Circuit 2:** - **Components:** - \( 2 \, \text{V} \) source - \( 18 \, \text{k}\Omega \) resistor - \( 2 \, \text{k}\Omega \) resistor - \( 2 \, \text{V} \) gate voltage - N-channel MOSFET **Circuit 3:** - **Components:** - \( 2 \, \text{V} \) source - \( 12 \, \text{k}\Omega \) resistor - \( 8 \, \text{k}\Omega \) resistor - \( 2 \, \text{V} \) gate voltage - N-channel MOSFET **Notes for Calculations:** - **Bias State Identification:** - Determine \( V_{GS} \) and \( V_{DS} \). - Compare with \( V_{tn} \) to find the state of each transistor. - **Model Equation:** - Use \( I_D = K_n \left(\frac{W}{L}\right) \left( V_{GS} - V_{tn} \right)^2 \) for saturation. - Use \( I_D = K
Expert Solution
Step 1: Step 1

In each figure we need to check the mode of operation of the transistor first. That means weather the transistor is in saturation region, cutoff region or linear region.

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