ELEC312 TUT3

Question 7

I Homework 6b 03182022.docx.pdf - Adobe Reader File Edit View Window Help 2 / 4 Tools Fill & Sign Comment Оpen 125% IT Sign In • Export PDF • Create PDF EP: RRE (Generalijed) Liiear Phase Filieus Euan Mart hin) - hcH-n) Gpes I I hin) --h(M.n) Types I&Z 2. Meven; (Ma6) M + maltipliro M adders X(n) Mesen be M odd ; (M=5) MA multijpleis M adders Madld Modd + For an ideal silicon p-n abrupt junction with NA = 5 x1016 cm and Np = See also cascade raalizationo in b.5.2 of OxS. 2021-10-20 19:02:14 -3 ст 5 x 10'5/cm³, 3 • Send Files • Store Files Calculate Vbi at 300K and 600K. Find the depletion layer width and maximum field at zero bias at T=300K. Hints: For Vbi calculation at T=600K, use Eg versus T formula (HW 1). 600 kT (600K)= kT(300K)x 300 3/2 600 N(600K)=N (300K)× 300 3/2 600 N, (600K)=N, (300K)× 300 3:36 AM Type here to search 日 27°C W 24-Mar-22

What is the capacitance per kilometer per phase of a single circuit, two bundle conductor line with horizontal configuration? The distance between the bundled conductors is 30 cm and the diameter of each conductor is 5cm. The distance between the centers of the bundle is 5mChoices: 0.0132uF/km 0.0126 uF/km 0.0143uf/km 0.0116uF/km   Please in typing format please