Electric Circuits. (11th Edition)
11th Edition
ISBN: 9780134746968
Author: James W. Nilsson, Susan Riedel
Publisher: PEARSON
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Chapter 1.6, Problem 5AP
a.
To determine
Find the values of voltage
b.
To determine
Find the value of power associated with the circuit element.
c.
To determine
Find whether the power is absorbed or delivered by the circuit element.
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In this experiment, we are going to use a 2N3904 BJT. Examine the data sheet for this device
carefully. In particular, make a note of the current gain (identified by hFE).
1. Obtain the curve trace for a "Darlington Pair" of Bipolar Junction Transistors. A Darlington
Pair consists of two transistors with the first BJT driving the base terminal of the second
transistor as shown in Figure 1 below.
A. Set up the primary sweep voltages for V1 the same as shown in the lecture notes (see
the Darlington pair IV curve).
B. Set up the secondary sweep currents for 11 to be an order of magnitude smaller than
for the single BJT. In the Sweep Type box choose linear and enter the following 3
values: Start Value: 0, End Value: 8u and Increment: 1u (see lecture notes).
C. Describe the primary differences you observe between the single BJT Curve Trace and
that of the Darlington Pair. Discuss what might cause each difference.
Q1
11
Q2
V1
Q2N3904
Figure 1. A Darlington Pair of 2N3904 transistors in a…
Chapter 1 Solutions
Electric Circuits. (11th Edition)
Ch. 1.2 - Assume a telephone signal travels through a cable...Ch. 1.2 - How many dollars per millisecond would the federal...Ch. 1.5 - The current at the terminals of the element in...Ch. 1.5 - The expression for the charge entering the upper...Ch. 1.6 - Objective 3—Know and use the definitions of power...Ch. 1.6 - Prob. 6APCh. 1.6 - A high-voltage direct-current (dc) transmission...Ch. 1 - The line described in Assessment Problem 1.7 is...Ch. 1 - A 32-inch monitor contains 3840 × 2160 picture...Ch. 1 - Some species of bamboo can grow (250 mm/day)....
Ch. 1 - A hand-held video player displays 480 × 320...Ch. 1 - The 16 gigabyte (GB = 230 bytes) flash memory chip...Ch. 1 - There are approximately 260 million passenger...Ch. 1 - The current entering the upper terminal of Fig....Ch. 1 - How much energy is imparted to an electron as it...Ch. 1 - In electronic circuits it is not unusual to...Ch. 1 - There is no charge at the upper terminal of the...Ch. 1 - Prob. 11PCh. 1 - When a car has a dead battery, it can often be...Ch. 1 - Prob. 13PCh. 1 - One 12 V battery supplies 100 mA to a boom box....Ch. 1 - The references for the voltage and current at the...Ch. 1 - Repeat Problem 1.15 with a current of −5 A.
1.15...Ch. 1 - The manufacturer of a 6 V dry-cell flashlight...Ch. 1 - The voltage and current at the terminals of the...Ch. 1 - Prob. 19PCh. 1 - The voltage and current at the terminals of the...Ch. 1 - Prob. 21PCh. 1 - The voltage and current at the terminals of the...Ch. 1 - The voltage and current at the terminals of the...Ch. 1 - The voltage and current at the terminals of the...Ch. 1 - An industrial battery is charged over a period of...Ch. 1 - The voltage and current at the terminals of an...Ch. 1 - 1.28 The voltage and current at the terminals of...Ch. 1 - The numerical values for the currents and voltages...Ch. 1 - The voltage and power values for each of the...Ch. 1 - The numerical values of the voltages and currents...Ch. 1 - The current and power for each of the...Ch. 1 - Assume you are an engineer in charge of a project...Ch. 1 - Show that the power balances for the circuit shown...Ch. 1 - Suppose there is no power lost in the wires used...
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- 2. Using the IV plots shown in Fig. 3 (and found in the reintroduction to PSpice) design a BJT biasing circuit that results in the following parameters: VCE = 2 Vand ig = 40 μA. We also require the power supply to be fixed at 5 Volts (this is where the load line intercepts the iB =ic = 0 line). You may use the circuit shown in Example 1. Note that all resistor values in Example 1 must be recalculated. Your solution for the base to ground and base to collector resistors may not be unique.arrow_forwardA circuit is given as shown. (a) Find and label the circuit nodes. (6) Determine I, I₁, I2 and V₂ I₂ +1 I 12V ww 22 2 ти + 보통 162 - ти 4 52 12 50 602 I 1 Mwarrow_forwarda) A silicon wafer is uniformly doped p-type with NA=10¹³/cm³. At T=0K, what are the equilibrium hole and electron concentrations?arrow_forward
- 1016 1015 Ge 101 Si 1013 1012 GaAs 10" (( uວ) uot¤ງແລ້ວuo ວາ.ຂ ວາsuuuT 0101 601 801 107 10% Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the following conditions. (n; =1010/cm³ at 300K) a) T 300 K, NA << ND, ND = 1015/cm³ b) T 300 K, NA = 9X1015/cm³, ND = 1016/cm³ c) T = 450 K, NA = 0, ND = 1014/cm³ d) T = 650 K, NA = 0, ND = 1014/cm³ 10° 200 300 400 500 600 700 T(K)arrow_forwardb) A semiconductor is doped with an impurity concentration N such that N >> n; and all the impurities are ionized. Also, n = N and p = n2/N. Is the impurity a donor or an acceptor? Explain.arrow_forwardd) For a silicon sample maintained at T=300K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are the hole and electron concentrations?arrow_forward
- e) In a nondegenerate germanium sample maintained under equilibrium conditions near room temperature, it is known that n=10¹³/cm³, n = 2p, and NA 0. Determine n and ND.arrow_forwardSolve fo the voltage across the 1kohm resistor using superposition for the three following cases: only V1 present, only V2 present, and both V1 and V2 present.arrow_forwardSemiconductor A has a band gap of 1eV, while semiconductor B has a band gap of 2eV. What is the ration of the intrinsic carrier concentrations in the two materials (n₁A/NB) at 300 K. Assume any differences in the carrier effective masses may be neglected.arrow_forward
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