The pure silicon mold given on the side is doped with 10 ^ 18cm ^ -3 phosphorus atoms. When the electrical field is applied to the silicon mold, the resulting flux density is 500A / cm ^ 2. The resistance of the silicon cup was measured as 50 ohms. The ability to move electrons is 1200cm ^ 2 / etc. The ability to characterize holes is 400cm ^ 2 / etc. accordingly, what is the length of the silicon container.

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The pure silicon mold given on the side is doped with 10 ^ 18cm ^ -3 phosphorus atoms. When the electrical field is applied to the silicon mold, the resulting flux density is 500A / cm ^ 2. The resistance of the silicon cup was measured as 50 ohms. The ability to move electrons is 1200cm ^ 2 / etc. The ability to characterize holes is 400cm ^ 2 / etc. accordingly, what is the length of the silicon container.

Yan tarafta verilen saf silikon kalıp, 101%cm-³ Fosfor atomu ile
kalıba
Silikon
20μ
katkılanmaktadır.
elektriksel
alan
uygulandığında oluşan toplam akı yoğunluğu 500 A/cm²" dir.
Silikon kalıbın direnci de 502 olarak ölçülmüştür. Elektron
hareket etme yeteneği 1200 cm?/V.s, deliklerin hareket etme
yeteneği ise 400 cm²/V.s’dir. Buna göre
Silikon kalıbın uzunluğu kaç um’dir?
50µm
L
Si için;
E̟(eV) = 1.1
E = 1.035 *1012 (F / cm)
B(cm*K2) = 5.23 *10'5
q = 1.6 *10-19
k = 86 *10°eV | K
n: =
1.5 x 1010 / cm³
%3D
V, = 0.025V
Transcribed Image Text:Yan tarafta verilen saf silikon kalıp, 101%cm-³ Fosfor atomu ile kalıba Silikon 20μ katkılanmaktadır. elektriksel alan uygulandığında oluşan toplam akı yoğunluğu 500 A/cm²" dir. Silikon kalıbın direnci de 502 olarak ölçülmüştür. Elektron hareket etme yeteneği 1200 cm?/V.s, deliklerin hareket etme yeteneği ise 400 cm²/V.s’dir. Buna göre Silikon kalıbın uzunluğu kaç um’dir? 50µm L Si için; E̟(eV) = 1.1 E = 1.035 *1012 (F / cm) B(cm*K2) = 5.23 *10'5 q = 1.6 *10-19 k = 86 *10°eV | K n: = 1.5 x 1010 / cm³ %3D V, = 0.025V
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