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The probability of electrons to be found in the conduction band of an intrinsic semiconductor of finite temperature A- increases exponentially with increasing band gap B- decreases exponentially with increasing band gap C- decreases with increasing temperature. D- is independent of the temperature and band gap In an n-type silicon, which of the following statements is true. A- Electrons are majority carriers and trivalent atoms are the dopants. B- Electrons are minority carriers and pentavalent atoms are the dopants. C- Holes are minority carriers and pentavalent atoms are the dopants. D- Holes are majority carriers and trivalent atoms are the dopants. If a small amount of antimony is added to germanium crystal A- its resistance is increased B- it becomes a p-type semiconductor C- there will be more free electrons than holes in the semiconductor, D none of these.

The probability of electrons to be found in the conduction band of an intrinsic semiconductor of finite temperature A- increases exponentially with increasing band gap B- decreases exponentially with increasing band gap C- decreases with increasing temperature. D- is independent of the temperature and band gap In an n-type silicon, which of the following statements is true. A- Electrons are majority carriers and trivalent atoms are the dopants. B- Electrons are minority carriers and pentavalent atoms are the dopants. C- Holes are minority carriers and pentavalent atoms are the dopants. D- Holes are majority carriers and trivalent atoms are the dopants. If a small amount of antimony is added to germanium crystal A- its resistance is increased B- it becomes a p-type semiconductor C- there will be more free electrons than holes in the semiconductor, D none of these.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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The probability of electrons to be found in the conduction band of an intrinsie semiconductor of finite temperature A- increases exponentially with increasing band gap B- decreases exponentially with increasing band gap C- decreases with increasing temperature. D- is independent of the temperature and band gap In an n-type silicon, which of the following statements is true. A- Electrons are majority carriers and trivalent atoms are the dopants. B- Electrons are minority carriers and pentavalent atoms are the dopants. C- Holes are minority carriers and pentavalent atoms are the dopants. D- Holes are majority carriers and trivalent atoms are the dopants. If a small amount of antimony is added to germanium crystal A- its resistance is increased B- it becomes a p-type semiconductor C- there will be more free electrons than holes in the semiconductor, D none of these.
Transcribed Image Text:The probability of electrons to be found in the conduction band of an intrinsie semiconductor of finite temperature A- increases exponentially with increasing band gap B- decreases exponentially with increasing band gap C- decreases with increasing temperature. D- is independent of the temperature and band gap In an n-type silicon, which of the following statements is true. A- Electrons are majority carriers and trivalent atoms are the dopants. B- Electrons are minority carriers and pentavalent atoms are the dopants. C- Holes are minority carriers and pentavalent atoms are the dopants. D- Holes are majority carriers and trivalent atoms are the dopants. If a small amount of antimony is added to germanium crystal A- its resistance is increased B- it becomes a p-type semiconductor C- there will be more free electrons than holes in the semiconductor, D none of these.
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