The dark saturation current of a solar cell is 1.7E-8 A/m², the cell temperature is 390 K, the short-circuit current density is 150 A/m², Vmax is 0.446 V and the available solar radiation is 797 W/m² . The Boltzmann's gas constant is 1.381X10-23 J/K and the electronic charge is 1.602X10-19 J/V. Calculate Open-circuit voltage Voc in Volts = Current density at maximum power Imax in A/m²= Maximum power Pmax in W/m2 =

The dark saturation current of a solar cell is 1.7E-8 A/m², the cell temperature is 390 K, the short-circuit current density is 150 A/m², Vmax is 0.446 V and the available solar radiation is 797 W/m² . The Boltzmann's gas constant is 1.381X10-23 J/K and the electronic charge is 1.602X10-19 J/V. Calculate Open-circuit voltage Voc in Volts = Current density at maximum power Imax in A/m²= Maximum power Pmax in W/m2 =

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

None
The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for silicon at 300K is Nc = 2.8x1019 cm 3. Calculate the thermal equilibrium electron concentration at T = 400K. O no = 2.17 X 1017 cm-3 O no = 2.24 X 1019 cm-3 no = 7.21 X 1015 cm-3 no = 4.31 X 101⁹ cm-3
A p-type bar of silicon below the left is subjected to electron injection from the left and hole injection from the right. Determine the total current flowing through the device if the cross- section area equals 1 μm x 1 μm.
Difficult problem that I need some help on please
solve in less than 30 min pls . pls.
Consider a material where the probability of a hole occupying a state in the middle of the valence band at room temperature is 0.7, what type of material is this? O An insulator O A conductor There is no enough information to determine the nature of the material O A semiconductor
Good evening, can you solve the electronic subject question within 5 minutes
A silicon diode is forward biased at 1.1 V. Find the resulting diode current. Note: T = 25 C, IS = 1pA, n = 1
Calculate the equivalent resistances Rin of the following circuits. (The resistance value of the diodes in the conduction will be 0, the resistance value of the diodes in the insulation will be taken as infinity. R1=10ohm
determine the fractional of total electrons still in the donor states at T= 300K. Assume Silicon is doped with phosphorous to a concentration of N=1014 cm³. [The ionization energy of donor electrons is 45 meV and Nc=2.8x1019 cm³] ww n www 0.029% 0.02% 0.2% 0.04%
Can the two options be resolved?
A student performs an experiment in laboratory (T=300 K) and his/her purpose is to change p-type Ge semiconductor into ntype with Fermi energy level of 0. 1eV below the conduction band. In order to accomplish this experiment, he/she adds 3.4x1017 cm3 donor concentrations. Therefore, how much acceptor impurity concentrations had been initially before student applied the experiment. Lütfen birini seçin: a. 1.515x107 cm b. 1.215x107 cm c. 1.015x107 cm d. 1.415x1017 cm e. 1.715x107 cm3 f. 1.615x1017 cma g. 1.315x1017 cm h. 1.115x107 cm