Q1) A 1200 strain gauge used to measure the strain and has a gauge factor of 2.5. It connected to a circuit shown in Figure 1. Compute the output voltage Vout if the applied strain was 150μe, 250μe, 500 με and 600με. R=12012 { =150µ R3 RG R29 12002 wr 1K02 www 10k() 1200 Koy-A R1 ww 49.5X02 LR4 V1 112 -M- 49.5KQ U2 R5 www 1k0 10V R10 3500 Strain guage K11 3500 1k0 RT -10k() 113 Y₁,

Q: A certain voltage is +11.1 V for 21.8 ms and -11.1V for the succeeding 21.8 ms and continues…

A: For the first time at , .For the succeeding , .The resistance value is .

Q: Exercice2: Show the state table of the following state diagram

A:

Q: Assume each diode to be OFF when V₂ ≤ 0.7V and ON when VĎ >0.7V. Find iD1, İD2, İD³, and vō in each…

A: Given:a circuit,when , the diode is off. when , the diode is on. Find:iD1, iD2, iD3 and v0.

Q: Determine the output voltage waveform for each circuit in Figure +10 V Vin OV -10 V (d) 3V 1.0 k out…

A:

Q: R3 27008 C1 D G HE a1 0.022 MF GEN R1 IM R2 27002 Figure 30-3. JFET voltage amplifier 2. Place CM…

A: The circuit is a common source JFET voltage amplifier.

Q: Figure 16-1 What is the voltage across the resistor in Figure 16-1(a) if the diode is germanium?…

A: It is given that:

Q: Draw the output voltage waveform for each circuit in Figure R www 2.2 ΚΩ +30 V Vin OV -30 V 8 D₁ D₂…

A: The problem has been solved as follows

Q: In a common base connection, a = 0.95. The voltage drop across 2 k resistance which is connected in…

A: Give, The circuit is Here, V2kΩ=2 Vα=0.95

Q: 4ΚΩ Μ 1+ 5ΚΩ m 6kΩ 40 Μ + + προστασίας 9k(2

A:

Q: May you explain part b a bit more I'm confused about how you got 2.5 after sin and e-j2.5

A: The problem has been solved below

Q: The resistance of 125 strain gauge changes by 1 Q for 4000 micro- strain. The gauge factor for…

A: Given: Resistance, R=125 Ω Change in resistance, ∆R=1 Ω Strain, ∆ll=4000×10-6 strain

Q: Q3/B/ Draw output waveform for following 4-1 multiplexer if the following data input and data select…

A: From the Basics of MUX

Photoconductive Cell

Photoconductive cells are light-sensitive resistors in which resistance is inversely proportionated to light intensity when illuminated. These devices consist of a thin single-crystal or polycrystalline film of composite semiconductor materials. Cadmium sulfide (CdS) is used to make the most commercially available photoconductive particles which are sensitive to light in the visible spectrum. Other less commonly used substances respond to infrared light, but not to the visible spectrum. Such substances are lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe), and so on.