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Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An electric field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority carriers [ cm/s ] at 350 K

Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An electric field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority carriers [ cm/s ] at 350 K

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Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at www wwawww www one point. An electric field of 50 V/cm is applied across the sample, and the field moves wwwww these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority ww carriers [ cm/s ] at 350 K is. 5.18 12.3 5.81 O 7.24
Transcribed Image Text:Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at www wwawww www one point. An electric field of 50 V/cm is applied across the sample, and the field moves wwwww these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority ww carriers [ cm/s ] at 350 K is. 5.18 12.3 5.81 O 7.24
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