A simple Ge n-i-n photo-detectorsample has a length of L = 30 µmand a hole lifetime of Tp= 0.8 µs.If a voltage of 2 V is applied acrossthe detector length, at 300 K thedetector gain at the applied voltagewill be:a. 1031b. 2112С. Оd. 1360e. 0.7104 4G75% DI 9:07SiGeGaAsprope.Prof. O M KhrcisMay 2, 2020: Si, Ge, Ga As Parameters and Universal ConstantsUNIVERSAL CONSTANTS6.63 x 10-34 J.s9.11 x 10-31 KgPropertiesSEMICONDUCTORhSiGeGaAsE, (eV)n, (cm-3)Hn (cm? /V – s)Pp (cm? /V – s)N. (cm-3)N, (em-3)m:/m.m; /m.E, (F/m)1.10.671.423.141.5 x 10102.3 x 10131.8 x 1061.602 x 10-19 C8.85 x 10-12 F/m1.05 x 10-34 J – 88.6 x 10-5 eV/K15003900850045019004002.78 x 1019| 1.04 x 1019 | 4.45 x 10179.84 x 1018K6 x 10187.72 x 1018KT/q26 mV (T = 300 K)0.0820.980.067КТ26 meV (T = 300 K)0.280.490.453 x 10° m/s11.71613.1Nair = 1NGaAs = 3.66Some useful relationsEgAl, Ga-rAs(r) = 1.424 + 1.247xEgin, Ga-1Ae(x) = 0.36 + 1.064r1 eV = 1.602 x 10-19 J1 KG = 1 x 10-5 Wb/cm?1...

The photoconductive gain G= Rate of electron flowRate of electron generation

A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of Tp = 0.8 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: а. 1031 b. 2112 С. О d. 1360 e. 0.7104

A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of Tp = 0.8 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: а. 1031 b. 2112 С. О d. 1360 e. 0.7104

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Optoelectronic
5
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